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high efficiency power schottky re ctifier mbr2045c 1 bcd semiconductor manufacturing limited mar. 2011 rev. 1. 5 data sheet general description high efficiency dual sc hottky rectifier suited for switch mode power supplies and other power convert- ers. this device is intended for use in medium voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required. mbr2045c is available in to-220-3, to-220-3 (2) and to-220f-3 packages. features low forward voltage: 0.57v @ 125 o c low power loss/high efficiency 150 o c operating junction temperature 20a total (10a each diode leg) guard-ring for stress protection high surge capacity pb-free package applications power supply output rectification power management instrumentation main product characteristics mechanical characteristics case: epoxy, molded epoxy meets ul 94v-0 @ 0.125in. weight (approximately): 1.9grams (to-220-3, to-220-3 (2) and to-220f-3) finish: all external surf aces corrosion resistant and terminal leads are readily solderable lead temperature for soldering purposes: 260 o c maximum for 10 seconds i f(av) 2 10a v rrm 45v t j 150 o c v f (max) 0.57v figure 1. package types of mbr2045c to-220-3 (optional) to-220f-3 to-220-3 (2)
high efficiency power schottky re ctifier mbr2045c 2 bcd semiconductor manufacturing limited mar. 2011 rev. 1. 5 data sheet pin configuration figure 2. pin configuration of mbr2045c (top view) t package figure 3. internal structure of mbr2045c (to-220-3) (optional) 1 2 3 a1 k a2 1 2 3 a1 k a2 tf package (to - 220f-3) (to-220-3 (2)) a1 a2 k 1 2 3 a1 k a2
high efficiency power schottky rectifier mbr2045c 3 bcd semiconductor manufacturing limited mar. 2011 rev. 1. 5 data sheet package part number marking id packing type lead free green lead free green to-220-3 (2) mbr2045ct-e1 MBR2045CT-G1 mbr2045ct-e1 MBR2045CT-G1 tube to-220f-3 mbr2045ctf-e1 mbr2045ctf-g1 mbr2045ctf-e1 mbr2045ctf-g1 tube ordering information circuit type e1: lead free mbr2045c - blank: tube g1: green bcd semiconductor's pb-free products, as desi gnated with "e1" suffix in the part number, are rohs compliant. products with "g1" suffix are available in green packages. package t: to-220-3 (2) tf: to-220f-3 to-220-3 (optional)
high efficiency power schottky re ctifier mbr2045c 4 bcd semiconductor manufacturing limited mar. 2011 rev. 1. 5 data sheet parameter symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 45 v average rectified forward current (rated v r ) t c =139 o c i f(av) 10 a peak repetitive forward current (rated v r , square wave, 20khz) t c =137 o c i frm 20 a non repetitive peak surge curre nt (surge applied at rated load conditions half wave, single phase, 60hz) i fsm 150 a peak repetitive revers e surge current (2.0 s, 1.0khz) i rrm 1.0 a operating junction temperature (note 2) t j 150 o c storage temperature range t stg -65 to 150 o c voltage rate of change (rated v r ) dv/dt 10000 v/ s esd (machine model=c) >400 v esd (human body model=3b) >8000 v note 1: stresses greater than those li sted under "absolute maximum ratings" may cause perm anent damage to the device. these are stress ratings only, and functi onal operation of the device at these or any other condi tions beyond those indicated under "recommended operating c onditions" is not implied. exposure to "abs olute maximum ratings" for extended periods may affect device reliability. note 2: the heat generated must be less than the thermal conductivity from junction to ambient: dp d /dt j < 1/ ja . absolute maximum ratings (each diode leg) (note 1) parameter symbol condition value unit maximum thermal resistance jc junction to case to-220-3/ to-220-3 (2) 2.2 o c/w to-220f-3 4.5 ja junction to ambient to-220-3/ to-220-3 (2) 60 thermal characteristics
high efficiency power schottky rectifier mbr2045c 5 bcd semiconductor manufacturing limited mar. 2011 rev. 1. 5 data sheet parameter condition symbol typ max unit maximum instantaneous forward voltage drop (note 3) i f =10a, t c =25 o c v f 0.59 0.65 v i f =10a, t c =125 o c 0.50 0.57 i f =20a, t c =25 o c 0.71 0.84 i f =20a, t c =125 o c 0.67 0.72 maximum instantaneous reverse current (note 3) rated dc voltage, t c =125 o c i r 515 ma rated dc voltage, t c =25 o c 0.01 0.1 electrical characteristics (each diode leg) note 3: pulse test: pulse width=300 s, duty cycle 2.0%.
high efficiency power schottky re ctifier mbr2045c 6 bcd semiconductor manufacturing limited mar. 2011 rev. 1. 5 data sheet figure 4. typical forward voltage figure 5. typical reverse current typical performance characteristics 0.1 1 10 100 0.00.10.20.30.40.50.60.70.80.91.0 v f , instantaneous forward voltage (v) i f , instantaneous forward current (a) 25 o c 125 o c 150 o c 0 1020304050 1e-7 1e-6 1e-5 1e-4 1e-3 0.01 0.1 1 10 i r , reverse current (ma) v r , reverse voltage (v) 25 o c 100 o c 125 o c 150 o c
high efficiency power schottky rectifier mbr2045c 7 bcd semiconductor manufacturing limited mar. 2011 rev. 1. 5 data sheet typical performance ch aracteristics (continued) figure 6. capacitance vs. v r , reverse voltage figure 7. average forward current vs. case temperature (square, each diode) 010203040 0 200 400 600 800 1000 capacitance (pf) v r , reverse voltage (v) t j =25 o c 100 110 120 130 140 150 160 0 2 4 6 8 10 12 14 i f(av) , average foward current (a) case temperature ( o c) square
high efficiency power schottky re ctifier mbr2045c 8 bcd semiconductor manufacturing limited mar. 2011 rev. 1. 5 data sheet mechanical dimensions to-220-3 unit: mm(inch) 3.560(0.140) 1 4 . 2 3 0 ( 0 . 5 6 0 ) 1.160(0.046) 0.813(0.032) 8 . 7 6 3 ( 0 . 3 4 5 ) 2.540(0.100) 0.356(0.014) 2.080(0.082) 3 7 3.560(0.140) 7 9.660(0.380) 0.550(0.022) 60 0.381(0.015) 2 . 5 8 0 ( 0 . 1 0 2 ) 6 0 8 . 5 2 0 ( 0 . 3 3 5 ) 1.500(0.059) 0.200(0.008) 1 . 8 5 0 ( 0 . 0 7 3 ) 2.540(0.100) 0.381(0.015) 0.406(0.016) 3 . 3 8 0 ( 0 . 1 3 3 ) 10.660(0.420) 4.060(0.160) 1.350(0.053) 2 7 . 8 8 0 ( 1 . 0 9 8 ) 3 0 . 2 8 0 ( 1 . 1 9 2 ) 9 . 5 2 0 ( 0 . 3 7 5 ) 1 6 . 5 1 0 ( 0 . 6 5 0 ) 4.820(0.190) 2.880(0.113) 1.760(0.069) (optional)
high efficiency power schottky rectifier mbr2045c 9 bcd semiconductor manufacturing limited mar. 2011 rev. 1. 5 data sheet mechanical dimens ions (continued) to-220-3 (2) unit: mm(inch) 3 3 3 9.800(0.386) 10.200(0.402) 3.560(0.140) 3.640(0.143) 11.100(0.437) ref 0.700(0.028) 0.900(0.035) 1.170(0.046) 1.390(0.055) 2.540(0.100) ref 2.540(0.100) ref 9.600(0.378) 10.600(0.417) 12.600(0.496) 13.600(0.535) 9.000(0.354) 9.400(0.370) 1.200(0.047) 1.400(0.055) 0.600(0.024) ref 6.300(0.248) 6.700(0.264) 4.400(0.173) 4.600(0.181) 2.200(0.087) 2.500(0.098) 0.400(0.016) 0.600(0.024) 1.620(0.064) 1.820(0.072) 1.200(0.047) 1.400(0.055) 3.000(0.118) ref ?
high efficiency power schottky re ctifier mbr2045c 10 bcd semiconductor manufacturing limited mar. 2011 rev. 1. 5 data sheet 4.300(0.169) 0.450(0.018) 0.600(0.024) 2.540(0.100) 9.700(0.382) 10.300(0.406) 6.900(0.272) 7.100(0.280) 3.000(0.119) 3.400(0.134) 14.700(0.579) 16.000(0.630) 1.000(0.039) 1.400(0.055) 1.100(0.043) 1.500(0.059) 2.790(0.110) 4.500(0.177) 12.500(0.492) 13.500(0.531) 0.550(0.022) 0.900(0.035) 2.540(0.100) 3.000(0.119) 3.550(0.140) 3.370(0.133) 3.900(0.154) 2.350(0.093) 2.900(0.114) 4.900(0.193) [ mechanical dimens ions (continued) to-220f-3 unit: mm(inch) ?
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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